RAM Expansion
This chapter tells how to gain access to the RAM expansion slot in the PowerBook G4 –12 inch computer and then describes the RAM expansion module.
In this section:
The RAM Expansion Slot
The RAM Expansion Module
The RAM Expansion Slot
The PowerBook G4 –12 inch computer has one RAM expansion slot. To get access to the RAM expansion slot, the user must open up the computer by performing the following operations.
Important: The user should be reminded to observe the usual precautions to avoid damage to the electronic components due to static electricity.
Shut down the computer.
Unplug the AC adapter from the computer.
Remove the battery from the computer.
Place the computer upside down on a soft cloth.
Using a Phillips head screwdriver, remove the four screws that secure the memory door, and lift off the door. See Figure 4-1.
If a memory card is installed, release it by spreading apart the tabs in the expansion slot from the notches in the card. Allow the card to pop up slightly, and pull it of of the slot.
Insert the replacement memory card into the slot at a 30 degree angle, as shown in Figure 4-2.
Press down on the sides of the card to lock in place.
Reinstall the memory door and reassemble the computer.
If AC and battery power are removed for longer than ten minutes, the computer’s clock may need to be reset in System Preferences when the computer is turned back on.
The RAM Expansion Module
The RAM expansion slot accommodates a standard DDR266B (PC2100) SO-DIMM (small outline, dual inline memory module) that uses DDR SDRAM devices.
Important: A RAM expansion SO-DIMM for the PowerBook G4 –12 inch computer must use DDR SDRAM devices. If the user installs an SO-DIMM that uses single data rate (SDR), SGRAM, or non-DDR SDRAM devices, the computer will beep twice when the user attempts to restart the computer.
An SO-DIMM for the PowerBook G4 –12 inch computer can contain either 128, 256, or 512 MB of memory. Maximum total RAM capacity using devices currently available is 640 MB and is limited by the space available for the SO-DIMM.
Mechanical Design of the RAM SO-DIMM
The mechanical characteristics of the RAM expansion module are given in the JEDEC specification JESD95 for the 200-pin 8-byte DRAM SO-DIMM. To find out how to obtain the specification, see “RAM Expansion Modules.”
The specification defines SO-DIMMs with nominal heights of 1.0, 1.25, 1.5, or 2.0 inches. The PowerBook G4 –12 inch can accommodate standard SO-DIMMs with a height of 1.0 or 1.25 inches.
The JEDEC specification defines the maximum depth or thickness of an SO-DIMM as 4 mm. That specification is also a maximum: Modules that exceed the specified thickness can cause reliability problems.
Electrical Design of the RAM SO-DIMM
The electrical characteristics of the RAM SO-DIMM are given in section 4.5.6 of the JEDEC Standard 21-C, release 7 (JESD-21C). To find out how to obtain the specification, see “RAM Expansion Modules.”
The specification defines several attributes of the DIMM, including storage capacity and configuration, connector pin assignments, and electrical loading. The specification supports SO-DIMMs with either one or two banks of memory.
The JEDEC specification for the SO-DIMM defines a Serial Presence Detect (SPD) feature that contains the attributes of the module. SO-DIMMs for use in the PowerBook G4 –12 inch are required to have the SPD feature. Information about the required values to be stored in the presence detect EEPROM is in section 4.1.2.5 and Figure 4.5.6–C (200-pin DDR SDRAM SO–DIMM, PD INFORMATION) of the JEDEC standard 21-C specification, release 7.
DDR SDRAM Devices
The DDR SDRAM devices used in the RAM expansion modules must be self-refresh type devices for operation from a 2.5 V power supply. The speed of the DDR SDRAM devices must be 133 MHz or greater.
The devices are programmed to operate with a CAS latency of 2.5 or 3. At these CAS latencies, the access time from the clock transition must be 7.5 ns or less. The burst length must be at least 4 and the minimum clock delay for back-to-back random column access cycles must be a latency of 1 clock cycle.
Configuration of RAM SO-DIMMs
Table 4-1 shows information about the different sizes of SO-DIMMs used in the PowerBook G4 –12 inch computer. The first three columns show the memory size, configuration, and number of banks in the SO-DIMMs. The other three columns show the number, density, and configuration of the DDR SDRAM devices making up the memory modules.
Address Multiplexing
Signals A[0] – A[12] and BA[0] – BA[1] on each RAM SO-DIMM make up a 15-bit multiplexed address bus that can support several different types of DDR SDRAM devices. Table 4-2 lists the types of devices that can be used in the PowerBook G4 –12 inch by size, configuration, and sizes of row, column, and bank addresses.
Important: The PowerBook G4 –12 inch computer supports only the types of DDR SDRAM devices specified in Table 4-2. Other types of DRAM devices should not be used with this computer.
RAM SO-DIMM Electrical Limits
Each RAM SO-DIMM must not exceed the following maximum current limits on the 2.5 V supply:
Active: 1.2 A (maximum of 8 devices per bank, 150 mA per device)
Sleep: 20 mA (total for all banks)
The Intrepid memory controller does not support 4-bit-wide SDRAM devices in any RAM expansion module.
© 2003 Apple Computer, Inc. All Rights Reserved. (Last updated: 2003-01-31)